Selective atomic layer reaction between GaN and SiN in HBr neutral beam etching
نویسندگان
چکیده
منابع مشابه
Neutral beam etching for device isolation in AlGaN/GaN HEMTs
1 Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan 2 Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan Advanced Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan Microsystems Technology Laboratories, Massachusetts Institute of Technolog...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A
سال: 2021
ISSN: 0734-2101,1520-8559
DOI: 10.1116/6.0000867